38 citations · 229 across the 30 of their papers we have counts for
31 papers
Sizes of Ferroelectricity Appearance and Disappearence in Nanosized Hafnia-Zirconia:Landau-type Theory
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin +1
Nanosized hafnia-zirconia HfxZr1-xO2 in the form of thin films, multilayers and heterostructures are indispensable silicon-compatible ferroelectric materials for advanced electroni…
Domain Morphology, Electrocaloric Response, and Negative Capacitance States of Ferroelectric Nanowires Array
Anna N. Morozovska, Oleksii V. Bereznykov, Maksym V. Strikha +4
We analyzed the domain morphology, electrocaloric response, and negative capacitance states in a one-dimensional array of uniformly oriented, radial symmetric ferroelectric nanowir…
Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field-Effect Transistors
Anna N. Morozovska, Eugene A. Eliseev, Yulian M. Vysochanskii +2
Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for…
An effective Landau-type model of HfZrO thin film - graphene nanostructure
Anna N. Morozovska, Maksym V. Strikha, Kyle P. Kelley +2
To describe the charge-polarization coupling in the nanostructure formed by a thin HfZrO film with a single-layer graphene as a top electrode, we develop the "effec…
Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?
Eugene A. Eliseev, Anna N. Morozovska, Lesya P. Yurchenko +1
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transist…
Fundamental miniaturization limits for MOSFETs with a monolayer MoS channel
Maksym V. Strikha, Mykola Yelisieiev, Anna N. Morozovska
We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in th…
Fundamental constraints for the length of the MOSFET conduction channel based on the realistic form of the potential barrier
Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in…
Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate
Maksym V. Strikha, Anna N. Morozovska, Zhanna G. Zemska
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are relat…
Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures
Eugene A. Eliseev, Anna N. Morozovska, Maksym V. Strikha
We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention…
Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield
Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska
Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it h…
Magnetic dielectric- graphene- ferroelectric system as a promising non-volatile device for modern spintronics
Anatolii I. Kurchak, Anna N. Morozovska, Maksym V. Strikha
The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum o…
Temperature behavior of graphene conductance induced by piezoelectric effect in ferroelectric substrate
Anna N. Morozovska, Anatolii I. Kurchak, Zhanna G. Zemska +1
Graphene on ferroelectric structures can be promising candidates for advanced field effect transistors, modulators and electrical transducers, providing that research of their elec…
Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)
Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska
Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresi…
Integer Quantum Hall Effect in Graphene Channel with p-n Junction at Domain Wall in Ferroelectric Substrate
Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska
We revealed that 180 degree ferroelectrics domain walls (FDWs) in a ferroelectric substrate, which induce p-n junctions in a graphene channel, lead to the nontrivial temperature an…
Nontrivial temperature behavior of the carrier concentration in the nanostructure "graphene channel on ferroelectric substrate with domain walls"
Anatolii I. Kurchak, Anna N. Morozovska, Sergei V. Kalinin +1
This work explores a nontrivial temperature behavior of the carriers concentration, which governs graphene channel conductance in the nano-structure "graphene channel on ferroelect…
Effect of surface ionic screening on polarization reversal scenario in ferroelectric thin films: crossover from ferroionic to antiferroionic states
Anna N. Morozovska, Eugene A. Eliseev, Anatolii I. Kurchak +4
Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelect…
P-N junctions dynamics in graphene channel induced by ferroelectric domains motion
Anatolii I. Kurchak, Eugene A. Eliseev, Sergei V. Kalinin +2
The p-n junctions dynamics in graphene channel induced by stripe domains nucleation, motion and reversal in a ferroelectric substrate is explored using self-consistent approach bas…
Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current
Maksym V. Strikha, Anna N. Morozovska
Here we present the theory of the conductivity of pn junction (pnJ) in graphene channel, placed on ferroelectric substrate, caused by ferroelectric domain wall (FDW) for the case o…
Hysteretic phenomena in GFET: general theory and experiment
Anatolii I. Kurchak, Anna N. Morozovska, Maksym V. Strikha
We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external…
Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall
Anna N. Morozovska, Eugene A. Eliseev, Maksym V. Strikha
We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectri…
Finite size effects of hysteretic dynamics in multi-layer graphene on ferroelectric
A. N. Morozovska, A. S. Pusenkova, O. V. Varenyk +3
The origin and influence of finite size effects on the nonlinear dynamics of space charge stored by multi layer graphene on ferroelectric and the resistivity of graphene channel we…
Anisotropy of Conductivity in Bilayer Graphene with Relatively Shifted Layers
V. G. Litovchenko, A. I. Kurchak, M. V. Strikha
A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to…
Ferroelectric domain triggers the charge modulation in semiconductors
Anna N. Morozovska, Eugene A. Eliseev, Anton V. Ievlev +6
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or…
Hysteretic phenomena in graphene's conductivity
A. I. Kurchak, A. N. Morozovska, M. V. Strikha
A model for the rival mechanisms of hysteresis in graphene channel resistivity on a substrate of different nature dependence on a gate voltage - a direct one (caused by adsorbates…