activity
20162021
most citedEffect of surface ionic screening on polarization reversal scenario in ferroelectric thin films: crossover from ferroionic to antiferroionic states

38 citations · 56 across the 6 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2021

Fundamental miniaturization limits for MOSFETs with a monolayer MoS channel

Maksym V. Strikha, Mykola Yelisieiev, Anna N. Morozovska

We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in th…

cond-mat.mes-hall20201 cited

Fundamental constraints for the length of the MOSFET conduction channel based on the realistic form of the potential barrier

Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska

The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in…

cond-mat.mes-hall2020

Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate

Maksym V. Strikha, Anna N. Morozovska, Zhanna G. Zemska

The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are relat…

cond-mat.mtrl-sci20206 cited

Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures

Eugene A. Eliseev, Anna N. Morozovska, Maksym V. Strikha

We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention…

cond-mat.mtrl-sci2019

Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it h…

cond-mat.mtrl-sci20197 cited

Magnetic dielectric- graphene- ferroelectric system as a promising non-volatile device for modern spintronics

Anatolii I. Kurchak, Anna N. Morozovska, Maksym V. Strikha

The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum o…