Modulation of mid-IR radiation by a gated graphene on ferroelectric substrate

Abstract

The possibility of modulation of mid-IR radiation by low voltage gated single/multilayer graphene on Pb(ZrxTi1-x)O3 (PZT) ferroelectric substrate was demonstrated theoretically. The depth of modulation for 5 layer graphene for the range of gate voltages, where thin PZT epitaxial film behaves as high-κ dielectric, can be of 10% order.

8 pages, 4 figures

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Graphene field effect transistors with ferroelectric gating
• Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
• Carrier-induced modulation of radiation by a gated graphene

Cited by in corpus (1)

• Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface