activity
20162025
most citedEngineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates

16 citations · 58 across the 14 of their papers we have counts for

collaborators

14 papers

physics.optics2025

Characterization of the optical response from variant InGaN nanowires emitting within the green spectral gap

Mohsen Esmaeilzadeh, Pablo Tieben, Soumyadip Chatterjee +2

This study provides a comprehensive physical and optical investigation of InGaN nanowires (NWs) designed to address the challenges posed by the green gap region. We conduct a detai…

physics.app-ph2024★ 2 cited

Spectroscopic Signature of Local Alloy Fluctuations in InGaN/GaN Multi-Quantum-Disk Light Emitting Diode Heterostructures and Its Impact on the Optical Performance

Soumyadip Chatterjee, Subhranshu Sekhar Sahu, Kanchan Singh Rana +3

Inhomogeneity-governed carrier localization has been investigated in three sets of InGaN/GaN multi-quantum-disk light-emitting diode (LED) structures grown by plasma-assisted molec…

physics.app-ph2024

Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires

Swagata Bhunia, Soumyadip Chatterjee, Ritam Sarkar +3

The demand for GaN Nanowires (NWs)-based optoelectronic devices has rapidly increased over the past few years due to its superior crystalline quality compare to their planar counte…

cond-mat.mes-hall2024

Gate voltage modulation of the superconducting state in a degenerate semiconductor

Bikash C. Barik, Himadri Chakraborti, Buddhadeb Pal +6

In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to mK in epitaxial Indium Nitride on Gallium Ni…

cond-mat.mes-hall2023

Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature

Swagata Bhunia, Ayan Majumder, Soumyadip Chatterjee +5

In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing qua…

physics.app-ph2023

Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)

Seshasainadh Pudi, Navneet Bhardwaj, Ritam Sarkar +6

In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was deposited on AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO and SiO, followed by rapid…