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20162025
most citedEngineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates

16 citations · 58 across the 14 of their papers we have counts for

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cond-mat.mtrl-sci2016★ 2 cited

Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique

Ritam Sarkar, R. Fandan, Krista R. Khiangte +6

The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA…