16 citations · 58 across the 14 of their papers we have counts for
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Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +4
The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges…
Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates
Krista R Khiangte, Jaswant S Rathore, Vaibhav Sharma +2
A mechanism of controlling the degree of strain relaxation in GeSn epilayers, grown by molecular beam epitaxy on Ge/Si(001) substrates, is reported in this work. It is demonstrated…
Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy
Krista R Khiangte, Jaswant S Rathore, J. Schmidt +3
All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) subst…
Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures
Krista R Khiangte, Jaswant S Rathore, Sudipta Das +5
Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural…