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physics.app-ph2018
Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates
Krista R Khiangte, Jaswant S Rathore, Vaibhav Sharma +2
A mechanism of controlling the degree of strain relaxation in GeSn epilayers, grown by molecular beam epitaxy on Ge/Si(001) substrates, is reported in this work. It is demonstrated…
physics.app-ph2018
Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy
Krista R Khiangte, Jaswant S Rathore, J. Schmidt +3
All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) subst…