2 citations · 2 across the 6 of their papers we have counts for
6 papers
Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires
Swagata Bhunia, Soumyadip Chatterjee, Ritam Sarkar +3
The demand for GaN Nanowires (NWs)-based optoelectronic devices has rapidly increased over the past few years due to its superior crystalline quality compare to their planar counte…
Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature
Swagata Bhunia, Ayan Majumder, Soumyadip Chatterjee +5
In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing qua…
Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)
Seshasainadh Pudi, Navneet Bhardwaj, Ritam Sarkar +6
In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was deposited on AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO and SiO, followed by rapid…
Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +3
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature s…
Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +4
The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges…
Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique
Ritam Sarkar, R. Fandan, Krista R. Khiangte +6
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA…