activity
20162024
most citedComprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique

2 citations · 2 across the 6 of their papers we have counts for

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Showing 2018Show all

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cond-mat.mtrl-sci2018

Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles

Swagata Bhunia, Ritam Sarkar, Dhiman Nag +4

The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges…