activity
20162024
most citedComprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique

2 citations · 2 across the 6 of their papers we have counts for

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Showing 2023Show all

2 papers · 1 filter

cond-mat.mes-hall2023

Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature

Swagata Bhunia, Ayan Majumder, Soumyadip Chatterjee +5

In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing qua…

physics.app-ph2023

Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)

Seshasainadh Pudi, Navneet Bhardwaj, Ritam Sarkar +6

In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was deposited on AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO and SiO, followed by rapid…