2 citations · 2 across the 6 of their papers we have counts for
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Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires
Swagata Bhunia, Soumyadip Chatterjee, Ritam Sarkar +3
The demand for GaN Nanowires (NWs)-based optoelectronic devices has rapidly increased over the past few years due to its superior crystalline quality compare to their planar counte…
Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)
Seshasainadh Pudi, Navneet Bhardwaj, Ritam Sarkar +6
In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was deposited on AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO and SiO, followed by rapid…
Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +3
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature s…