48 citations · 251 across the 14 of their papers we have counts for
6 papers · 1 filter
Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies
Leslie M. Valdez-Sandoval, Eloy Ramirez-Garcia, David Jiménez +1
In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of…
Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
Giovanni Spinelli, Patrizia Lamberti, Vincenzo Tucci +2
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon ele…
A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances
Anibal Pacheco-Sanchez, Javier N. Ramos-Silva, Eloy Ramirez-Garcia +1
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of co…
Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies
Anibal Pacheco-Sanchez, David Jiménez
The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degrad…
Contact resistance extraction of graphene FET technologies based on individual device characterization
Anibal Pacheco-Sanchez, Pedro C. Feijoo, David Jiménez
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different…
The 2D pn Junction Driven Out-of-Equilibrium
Ferney A. Chaves, Pedro C. Feijoo, David Jiménez
The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junctio…