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20142021
most citedA physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data

48 citations · 251 across the 14 of their papers we have counts for

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Showing 2021Show all

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physics.app-ph2021★ 11 cited

Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications

Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6

The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…