activity
20142025
most citedSnake Trajectories in Ultraclean Graphene p-n Junctions

117 citations · 574 across the 14 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

13 papers · 1 filter

cond-mat.mes-hall2025

Pressure-tunable phase transitions in atomically thin Chern insulator MnBiTe

Albin Marffy, Endre Tovari, Yu-Fei Liu +8

Topological insulators lacking time-reversal symmetry can exhibit the quantum anomalous Hall effect. Odd-layer thick MnBiTe is a promising platform due to its intrinsic mag…

cond-mat.mes-hall2023★ 8 cited

Signature of pressure-induced topological phase transition in ZrTe

Zoltán Kovács-Krausz, Dániel Nagy, Albin Márffy +9

The layered van der Waals material ZrTe is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an appa…

cond-mat.mes-hall2021★ 40 cited

Tailoring the band structure of twisted double bilayer graphene with pressure

Bálint Szentpéteri, Peter Rickhaus, Folkert K. de Vries +8

Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly c…

cond-mat.mes-hall2021★ 1 cited

Boosting proximity spin orbit coupling in graphene/WSe heterostructures via hydrostatic pressure

Bálint Fülöp, Albin Márffy, Simon Zihlmann +10

Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly…

cond-mat.mes-hall2019★ 62 cited

Ultra-thin van der Waals crystals as semiconductor quantum wells

Johanna Zultak, Samuel Magorrian, Maciej Koperski +11

Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso…

cond-mat.mes-hall2018★ 56 cited

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Matthew Hamer, Endre Tóvári, Mengjian Zhu +13

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron…