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Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
Yizheng Liu, Haochen Wang, Carl Peterson +3
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia +2
This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to…
2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…
Kilovolt-Class Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally Doped Drift Layers
Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4
We report on the growth optimization of intentionally low-doped ( ) high-quality drift layers up to 10 thick via MOCVD and the fabrication of kil…