42 citations · 218 across the 13 of their papers we have counts for
13 papers
Burton-Cabrera-Frank theory for surfaces with alternating step types
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diff…
Crystal Truncation Rods from Miscut Surfaces with Alternating Terminations
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crysta…
Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be expl…
In Situ Microbeam Surface X-ray Scattering Reveals Alternating Step Kinetics During Crystal Growth
Guangxu Ju, Dongwei Xu, Carol Thompson +5
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different g…
Persistence of Island Arrangements During Layer-by-Layer Growth Revealed Using Coherent X-rays
Guangxu Ju, Dongwei Xu, Matthew J. Highland +7
Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) usin…
Real-time X-ray Monitoring of the Nucleation and Growth of AlN Epitaxial Films on Sapphire (0001)
Guangxu Ju, Matthew J. Highland, Jeffrey A. Eastman +4
We report the results of x-ray scattering studies of AlN on c-plane sapphire during reactive radiofrequency magnetron sputtering. The sensitivity of in situ x-ray measurements allo…
Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN
Edith Perret, Dongwei Xu, M. J. Highland +5
Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase ep…
Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces
Dongwei Xu, Peter Zapol, G. Brian Stephenson +1
The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high…
Oxygen modulated quantum conductance for ultra-thin HfO-based memristive switching devices
Xiaoliang Zhong, Ivan Rungger, Peter Zapol +1
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and…
The effect of Ta oxygen scavenger layer on HfO-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport
X. Zhong, I. Rungger, P. Zapol +3
Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access…
Giant two-phonon Raman scattering from nanoscale NbC precipitates in Nb
C. Cao, R. Tao, D. C. Ford +8
High purity niobium (Nb), subjected to the processing methods used in the fabrication of superconducting RF cavities, displays micron-sized surface patches containing excess carbon…
Electronic and magnetic properties of Ti4O7 predicted by self-interaction corrected density functional theory
Xiaoliang Zhong, Ivan Rungger, Peter Zapol +1
Understanding electronic properties of sub-stoichiometric phases of titanium oxide such as Magnéli phase Ti4O7 is crucial in designing and modeling resistive switching devices. Her…
Transport properties of n-type ultrananocrystalline diamond films
I. S. Beloborodov, P. Zapol, D. M. Gruen +1
We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conduc…