Transport properties of n-type ultrananocrystalline diamond films

Abstract

We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several orders of magnitude. We show that films produced at low concentration of nitrogen in the plasma are very resistive and electron transport occurs via a variable range hopping mechanism while in films produced at high nitrogen concentration the electron states become delocalized and the transport properties of ultrananocrystalline diamond films can be described using the Boltzmann formalism. We discuss the critical concentration of carriers at which the metal to insulator transition in ultrananocrystalline diamond films occurs and compare our results with available experimental data.

arXiv comment5 pages, 3 figures

References in corpus (1)

• Coulomb effects and hopping transport in granular metals

Cited by in corpus (3)

• Theoretical Evaluation of Electronic Density-of-states and Transport Effects on Field Emission from $n$-type Ultrananocrystalline Diamond Films
• Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions
• Conductivity crossover in nano-crystalline diamond films: Realization of a disordered superlattice-like structure