42 citations · 218 across the 13 of their papers we have counts for
3 papers · 1 filter
Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces
Dongwei Xu, Peter Zapol, G. Brian Stephenson +1
The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high…
Oxygen modulated quantum conductance for ultra-thin HfO-based memristive switching devices
Xiaoliang Zhong, Ivan Rungger, Peter Zapol +1
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and…
The effect of Ta oxygen scavenger layer on HfO-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport
X. Zhong, I. Rungger, P. Zapol +3
Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access…