N. Pradhan

activity

20112023

most citedField-Effect Transistors Based on Few-Layered alpha-MoTe_2

378 citations · 1.1k across the 14 of their papers we have counts for

collaborators

Showing 2015Show all

6 papers · 1 filter

cond-mat.mes-hall2015★ 130 cited

Metal to insulator quantum-phase transition in few-layered ReS $_{2}$

Nihar R. Pradhan, Amber McCreary, Daniel Rhodes +11

In ReS $_{2}$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS $_{2}$ crystallizes in the 1T $^{'}$ -structure which l…

cond-mat.mes-hall2015★ 2 cited

Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe $_{2}$ field-effect transistors

Nihar R. Pradhan, Zhengguang Lu, Daniel Rhodes +3

Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe $_{2}$ field-effect transistors whose…

cond-mat.mes-hall2015★ 8 cited

Fabrication of Flexible Oriented Magnetic Thin Films with Large in-plane Uniaxial Anisotropy by Roll-to-roll Nanoimprint Lithography

Rukshan M. Thantirige, Jacob John, Nihar R. Pradhan +2

Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe…

cond-mat.mes-hall2015★ 1 cited

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe $_{2}$ Transistors

Nihar R. Pradhan, Jonathan Ludwig, Zhengguang Lu +6

Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe $_{2}$ crystals mechanically exfoliated ont…

cond-mat.mtrl-sci2015★ 87 cited

Role of spin-orbit coupling and evolution of the electronic structure of WTe $_{2}$ under an external magnetic field

D. Rhodes, S. Das, Q. R. Zhang +5

Here, we present a detailed study on the temperature and angular dependence of the Shubnikov-de-Haas (SdH) effect in the semi-metal WTe $_{2}$ . This compound was recently shown to dis…

cond-mat.mes-hall2015★ 132 cited

Hall and field-effect mobilities in few layered $p$ -WSe $_{2}$ field-effect transistors

N. R. Pradhan, D. Rhodes, S. Memaran +9

Here, we present a temperature ( $T$ ) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe $_{2}$ exfoliated onto SiO $_{2}$ .…

Metal to insulator quantum-phase transition in few-layered ReS2​

Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe2​ field-effect transistors

Fabrication of Flexible Oriented Magnetic Thin Films with Large in-plane Uniaxial Anisotropy by Roll-to-roll Nanoimprint Lithography

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe2​ Transistors

Role of spin-orbit coupling and evolution of the electronic structure of WTe2​ under an external magnetic field

Hall and field-effect mobilities in few layered p-WSe2​ field-effect transistors

Metal to insulator quantum-phase transition in few-layered ReS $_{2}$

Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe $_{2}$ field-effect transistors

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe $_{2}$ Transistors

Role of spin-orbit coupling and evolution of the electronic structure of WTe $_{2}$ under an external magnetic field

Hall and field-effect mobilities in few layered $p$ -WSe $_{2}$ field-effect transistors