N. Pradhan

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20112023

most citedField-Effect Transistors Based on Few-Layered alpha-MoTe_2

378 citations · 1.1k across the 14 of their papers we have counts for

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cond-mat.mes-hall2013★ 116 cited

Intrinsic carrier mobility of multi-layered MoS $_{2}$ field-effect transistors on SiO $_{2}$

N. R. Pradhan, D. Rhodes, Q. Zhang +4

By fabricating and characterizing multi-layered MoS $_{2}$ -based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations…

Intrinsic carrier mobility of multi-layered MoS2​ field-effect transistors on SiO2​

Intrinsic carrier mobility of multi-layered MoS $_{2}$ field-effect transistors on SiO $_{2}$