activity
20152020
most citedAntiferromagnetic phase of the gapless semiconductor V3Al

37 citations · 77 across the 3 of their papers we have counts for

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5 papers · 1 filter

cond-mat.mtrl-sci2020

Multiferroic behavior confined by symmetry in EuTiO3 films

P. J. Ryan, G. E. Sterbinsky, Y. Choi +11

We have elucidated the spin, lattice, charge and orbital coupling mechanism underlying the multiferroic character in tensile strained EuTiO3 films. Symmetry determined by oxygen oc…

cond-mat.mtrl-sci2018

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

M. Golalikhani, Q. Lei, R. U. Chandrasena +13

The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum conf…

cond-mat.mtrl-sci201524 cited

Low-moment ferrimagnetic phase of the Heusler compound Cr2CoAl

Michelle E. Jamer, Luke G. Marshall, George E. Sterbinsky +2

Synthesizing half-metallic fully-compensated ferrimagnets that form in the inverse Heusler phase could lead to superior spintronic devices. These materials would have high spin pol…

cond-mat.mtrl-sci201516 cited

Stoichiometry Dependence of Potential Screening at LaAlO/SrTiO Interfaces

C. Weiland, G. E. Sterbinsky, A. K. Rumaiz +4

Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on 10 unit cell LaAl$_{…

cond-mat.mtrl-sci201537 cited

Antiferromagnetic phase of the gapless semiconductor V3Al

M. E. Jamer, B. A. Assaf, G. E. Sterbinsky +5

Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducti…