Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
arXiv:1806.07224 · doi:10.1038/s41467-018-04546-5
Abstract
The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect the observable properties in the ultrathin films. Here we report results obtained for near-ideal LaNiO3 films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO3 substrates. We find that the room-temperature metallic behavior persists until the film thickness is reduced to an unprecedentedly small 1.5 unit cells (NiO2 termination). Electronic structure measurements using x-ray absorption spectroscopy and first-principles calculation suggest that oxygen vacancies existing in the films also contribute to the metal insulator transition.
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Cited by in corpus (14)
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- Probing Emergent Surface and Interfacial Properties in Complex Oxides via in situ X-ray Photoelectron Spectroscopy
- Oxygen vacancy induced site-selective mott transition in lanio3
- Two-dimensional type-II Dirac fermions in a LaAlO3/LaNiO3/LaAlO3 quantum well
- Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure
- Anisotropy of electronic correlations: On the applicability of local theories to layered materials
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- Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films