activity
20152021
most citedLow-frequency charge noise in Si/SiGe quantum dots

154 citations · 618 across the 8 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2021★ 130 cited

Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Elliot J. Connors, JJ Nelson, Lisa F. Edge +1

Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise…

cond-mat.mes-hall2019★ 77 cited

Rapid high-fidelity spin state readout in Si/SiGe quantum dots via radio-frequency reflectometry

Elliot J. Connors, JJ Nelson, John M. Nichol

Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is re…

cond-mat.mes-hall2019★ 154 cited

Low-frequency charge noise in Si/SiGe quantum dots

Elliot J. Connors, JJ Nelson, Haifeng Qiao +2

Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi…

cond-mat.mes-hall2015★ 13 cited

Metallic State of Low Mobility Silicon at High Carrier density induced by an Ionic Liquid

JJ Nelson, A. M. Goldman

High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silico…

cond-mat.mes-hall2015★ 11 cited

Hopping Conduction via Ionic Liquid Induced Silicon Surface States

J. Nelson, K. V. Reich, M. Sammon +2

In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped -Si, which is so well studied that it can be called the "hydrogen atom…