activity
20152017
most citedLong Time Stability of the Energy Scale Calibration of a Quantum 2000

10 citations · 34 across the 8 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mtrl-sci20153 cited

In-Situ Low-Angle Cross Sectioning: Bevel Slope Flattening due to Self-Alignment Effects

Uwe Scheithauer

Low-angle cross sections are produced inside an Auger microprobe using the equipped depth profile ion sputter gun. Simply the sample is partly covered by a mask. Utilizing the edge…

physics.ins-det201510 cited

Long Time Stability of the Energy Scale Calibration of a Quantum 2000

Uwe Scheithauer

According to the international standard ISO 15472 the energy scale of an XPS instrument, type Physical Electronics Quantum 2000, was calibrated. It is shown, how the procedures of…

cond-mat.mtrl-sci20151 cited

Reducing the Aspect Ratio of Contact Holes by In-Situ Low-Angle Cross Sectioning

Uwe Scheithauer

Auger analysis of high-aspect ratio contact holes of integrated microelectronic devices is a challenging analytical task. Due to geometrical shadowing the primary electron beam and…

cond-mat.mtrl-sci20156 cited

Improved Sputter Depth Resolution in Auger Thin Film Analysis Using In Situ Low Angle Cross-Sections

Uwe Scheithauer

A none conventional approach for depth profiling of thin film systems with enhanced depth resolution has been developed using standard Auger microprobe instruments. For the prepara…

cond-mat.mtrl-sci20153 cited

Examples for the improvements in AES Depth Profiling of Multilayer Thin Film Systems by Application of Factor Analysis Data Evaluation

Uwe Scheithauer

Factor Analysis has proved to be a powerful tool for the full exploitation of the chemical information included in the peak shapes and peak positions of spectra measured by AES dep…

cond-mat.mtrl-sci20154 cited

Combined AES/Factor Analysis and RBS Investigation of a Thermally Treated Pt/Ti Metallisation on SiO2

U. Scheithauer, W. Hösler, R. Bruchhaus

Pt/Ti metallisation bilayers are used as bottom electrodes for ferroelectric thin films. During deposition of the ferroelectric films, these electrodes are exposed to elevated temp…