21 citations · 126 across the 24 of their papers we have counts for
24 papers
A detailed study on spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy
Masataka Yukumoto, Koji Mori, Ayaki Takeda +11
We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. In our previous study, we succe…
Evaluation of the X-ray SOI pixel detector with the on-chip ADC
Hiroumi Matsuhashi, Kouichi Hagino, Aya Bamba +16
XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 s as well as a high detection efficiency for X-rays above…
Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy
Masataka Yukumoto, Koji Mori, Ayaki Takeda +14
We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. The PDD structure is formed in…
Radiation-Induced Degradation Mechanism of X-ray SOI Pixel Sensors with Pinned Depleted Diode Structure
Kouichi Hagino, Masatoshi Kitajima, Takayoshi Kohmura +7
The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging sp…
Single Event Tolerance of X-ray SOI Pixel Sensors
Kouichi Hagino, Mitsuki Hayashida, Takayoshi Kohmura +19
We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work,…
Proton radiation damage tolerance of wide dynamic range SOI pixel detectors
Shun Tsunomachi, Takayoshi Kohmura, Kouichi Hagino +15
We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics e…
X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite "FORCE"
Masatoshi Kitajima, Kouichi Hagino, Takayoshi Kohmura +20
We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulat…
Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure
Mitsuki Hayashida, Kouichi Hagino, Takayoshi Kohmura +19
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes i…
Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"
Ryota Kodama, Takeshi Go Tsuru, Takaaki Tanaka +17
We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray sa…
Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy
Kouichi Hagino, Keigo Yarita, Kousuke Negishi +19
The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagneticall…
Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices
Y. Kamiya, T. Miyoshi, H. Iwase +7
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate se…
Measurement of Charge Cloud Size in X-ray SOI Pixel Sensors
Kouichi Hagino, Kenji Oono, Kousuke Negishi +20
We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experim…
Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area
Hideki Hayashi, Takeshi Go Tsuru, Takaaki Tanaka +23
We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has…
Performance of SOI Pixel Sensors Developed for X-ray Astronomy
Takaaki Tanaka, Takeshi Go Tsuru, Hiroyuki Uchida +24
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS…
X-ray response evaluation in subpixel level for X-ray SOI pixel detectors
Kousuke Negishi, Takayoshi Kohmura, Kouichi Hagino +21
We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical…
Proton Radiation Damage Experiment for X-Ray SOI Pixel Detectors
Keigo Yarita, Takayoshi Kohmura, Kouichi Hagino +23
In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of de…
Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure
Sodai Harada, Takeshi Go Tsuru, Takaaki Tanaka +23
We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic ac…
Kyoto's Event-Driven X-ray Astronomy SOI pixel sensor for the FORCE mission
Takeshi G. Tsuru, Hideki Hayashi, Katsuhiro Tachibana +23
We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for…
Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors
Kenji Kiuchi, Shinhong Kim, Yuji Takeuchi +28
We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(CB). The superconducting-tunnel-junctions(STJs…
Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET
Akihiro Koyama, Kenji Shimazoe, Hiroyuki Takahashi +6
To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional…
Compensation for TID Damage in SOI Pixel Devices
Naoshi Tobita, Shunsuke Honda, Kazuhiko Hara +7
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environ…
Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor
Mari Asano, Kazuhiko Hara, Daisuke Sekigawa +5
We are developing monolithic pixel sensors based on a 0.2 m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) e…
Compensation of radiation damages for SOI pixel detector via tunneling
Miho Yamada, Yasuo Arai, Ikuo Kurachi
We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environmen…
X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement
Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai +5
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for…