Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices

Abstract

We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$\% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1\pm 0.2\mu$m in terms of a standard deviation of the line spread function.

arXiv comment6 pages, 7 figures, 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector - HSTD12

References in corpus (4)

• Development of a Pixel Detector for Ultra-Cold Neutrons
• Development of Integration-Type Silicon-On-Insulator Monolithic Pixel Detectors by Using a Float Zone Silicon
• Boron-10 conversion layer for ultra-cold neutron detection
• Integration of a ${}^6$LiInSe${}_2$ Thermal Neutron Detector into a CubeSat Instrument

Cited by in corpus (4)

• Development of Two-Dimensional Neutron Imager with a Sandwich Configuration
• Spatial resolution determination of a position sensitive ultra-cold neutron detector
• Assessment of the Imaging Performance of the CITIUS High-Resolution Detector for Heavy Charged Particles and Neutrons
• Development of a Neutron Imager using CMOS Pixelated Sensor