21 citations · 126 across the 24 of their papers we have counts for
6 papers · 1 filter
Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors
Kenji Kiuchi, Shinhong Kim, Yuji Takeuchi +28
We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(CB). The superconducting-tunnel-junctions(STJs…
Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET
Akihiro Koyama, Kenji Shimazoe, Hiroyuki Takahashi +6
To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional…
Compensation for TID Damage in SOI Pixel Devices
Naoshi Tobita, Shunsuke Honda, Kazuhiko Hara +7
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environ…
Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor
Mari Asano, Kazuhiko Hara, Daisuke Sekigawa +5
We are developing monolithic pixel sensors based on a 0.2 m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) e…
Compensation of radiation damages for SOI pixel detector via tunneling
Miho Yamada, Yasuo Arai, Ikuo Kurachi
We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environmen…
X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement
Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai +5
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for…