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Intrinsic Carrier Losses in Tellurium Due to Radiative and Auger Recombinations
Jörg Hader, Sven C. Liebscher, Jerome V. Moloney +1
Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombination…
Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band
Christian Fuchs, Imad Limame, Stefan Reinhard +6
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose…
Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors
Sven C. Liebscher, Lars C. Bannow, Jörg Hader +2
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) wi…
Ab-initio calculation of band alignments for opto-electronic simulations
Jan Oliver Oelerich, Maria J. Weseloh, Kerstin Volz +1
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,G…
Microscopic calculation of the optical properties and intrinsic losses in the methylammonium lead iodide perovskite system
Lars C. Bannow, Jörg Hader, Jerome V. Moloney +1
For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscop…
Observation of Inter-layer Excitons in MoSe2 Single Crystals
Jason Horng, Tineke Stroucken, Long Zhang +3
Interlayer excitons are observed coexisting with intralayer excitons in bi-layer, few-layer, and bulk MoSe2 single crystals by confocal reflection contrast spectroscopy. Quantitati…