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51 papers
Intrinsic Carrier Losses in Tellurium Due to Radiative and Auger Recombinations
Jörg Hader, Sven C. Liebscher, Jerome V. Moloney +1
Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative- and Auger-recombination…
On the importance of electron-electron and electron-phonon scatterings and energy renormalizations during carrier relaxation in monolayer transition-metal dichalcogenides
J. Hader, J. Neuhaus, J. V. Moloney +1
An based fully microscopic many-body approach is used to study the carrier relaxation dynamics in monolayer transition-metal dichalcogenides. Bandstructures a…
Microscopic Theory for the Incoherent Resonant and Coherent Off-Resonant Optical Response of Tellurium
S. C. Liebscher, M. K. Hagen, J. Hader +2
An based fully microscopic approach is applied to study the nonlinear optical response of bulk Tellurium. The structural and electronic properties are calcula…
Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band
Christian Fuchs, Imad Limame, Stefan Reinhard +6
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose…
Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers
Christian Fuchs, Ada Baeumner, Anja Brueggemann +7
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well…
Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors
Sven C. Liebscher, Lars C. Bannow, Jörg Hader +2
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) wi…