An ab initio based approach to optical properties of semiconductor heterostructures

Abstract

A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function approach is applied to model the quantum well using the kp-wave functions and eigenvalues as starting point for calculating the optical properties of the heterostructure. It is shown that Luttinger parameters derived from band structures computed with the TB09 density functional reproduce extrapolated values. The procedure is illustrated by computing the absorption spectra for a (AlGa)As/Ga(AsP)/(AlGa)As quantum well system with varying phosphide content in the active layer.

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Cited by in corpus (2)

• Systematic strain-induced bandgap tuning in binary III-V semiconductors from density functional theory
• Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors