34 citations · 60 across the 7 of their papers we have counts for
7 papers
Restricted-Geometry Quantum Models Beyond Atoms: Application of the Eckhardt-Sacha approach to NSDI in Diatomic Systems
Lars C. Bannow, Jan H. Thiede, Michał Ogryzek +2
We present a (1+1)-dimensional quantum model designed to describe nonsequential double ionization (NSDI) in homonuclear diatomic molecules exposed to strong linearly polarized lase…
Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors
Sven C. Liebscher, Lars C. Bannow, Jörg Hader +2
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) wi…
Microscopic calculation of the optical properties and intrinsic losses in the methylammonium lead iodide perovskite system
Lars C. Bannow, Jörg Hader, Jerome V. Moloney +1
For opto-electronic and photo-voltaic applications of perovskites, it is essential to know the optical properties and intrinsic losses of the used materials. A systematic microscop…
Valence band splitting in bulk dilute bismides
Lars C. Bannow, Stefan C. Badescu, Jörg Hader +2
The electronic structure of bulk GaAsBi systems for different atomic configurations and Bi concentrations is calculated using density functional theory. The results sho…
Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
Phil Rosenow, Lars C. Bannow, Eric W. Fischer +4
While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has p…
An ab initio based approach to optical properties of semiconductor heterostructures
L. C. Bannow, P. Rosenow, P. Springer +5
A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio…
Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys
Lars C. Bannow, Oleg Rubel, Phil Rosenow +5
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in galli…