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20162025
most citedConfiguration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

34 citations · 60 across the 7 of their papers we have counts for

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Showing 2020Show all

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cond-mat.mtrl-sci2020

Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors

Sven C. Liebscher, Lars C. Bannow, Jörg Hader +2

The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) wi…