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20162025
most citedConfiguration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

34 citations · 60 across the 7 of their papers we have counts for

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cond-mat.mtrl-sci2016★ 34 cited

Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

Lars C. Bannow, Oleg Rubel, Phil Rosenow +5

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in galli…