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Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band
Christian Fuchs, Imad Limame, Stefan Reinhard +6
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose…
Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers
Christian Fuchs, Ada Baeumner, Anja Brueggemann +7
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well…
Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors
Sven C. Liebscher, Lars C. Bannow, Jörg Hader +2
The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) wi…
Mass Renormalization in Transition Metal Dichalcogenides
T. Stroucken, J. Neuhaus, S. W. Koch
It is shown that the three-fold rotational symmetry in transition metal dichalcogenides leads to a Coulomb induced renormalization of the effective electron and hole masses near th…