Exciton-Population Inversion and Terahertz Gain in Resonantly Excited Semiconductors

Abstract

The build-up of exciton populations in resonantly laser excited semiconductors is studied microscopically. For excitation at the $2s$-exciton resonance, it is shown that polarization with a strict $s$-type radial symmetry can be efficiently converted into an incoherent $p$-type population. As a consequence, inversion between the $2p$ and $1s$ exciton states can be obtained leading to the appearance of significant terahertz gain.

arXiv comment4 pages, 3 figures

References in corpus (2)

• Transport equations including many-particle correlations for an arbitrary quantum system. General formalism
• Influence of Coulomb and Phonon Interaction on the Exciton Formation Dynamics in Semiconductor Heterostructures

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• Two-Electron Linear Intersubband Light Absorption in a Biased Quantum Well