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20022008
most citedGaMnAs-based hybrid multiferroic memory device

99 citations · 696 across the 21 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mes-hall200826 cited

An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

C. Gould, S. Mark, K. Pappert +14

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprint…

cond-mat.mes-hall2008

Electron-mediated ferromagnetism and small spin-orbit interaction in a molecular-beam-epitaxy grown n-type heterostructure with Mn -doping

A. Bove, F. Altomare, N. B. Kundtz +4

We report the first evidence of electron-mediated ferromagnetism in a molecular-beam-epitaxy (MBE) grown heterostructure with Mn -doping. The interacti…

cond-mat.mes-hall2008

A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown heterostructure with Mn -doping

A. Bove, F. Altomare, N. B. Kundtz +4

We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier densit…

cond-mat.mes-hall200767 cited

Weak localization in GaMnAs: evidence of impurity band transport

L. P. Rokhinson, Y. Lyanda-Geller, Z. Ge +4

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ( K) and low magnetic fields ( mT). We attribut…

cond-mat.mes-hall200757 cited

Near-bandgap wavelength-dependent studies of long-lived traveling coherent longitudinal acoustic phonon oscillations in GaSb/GaAs systems

J. K. Miller, J. Qi, Y. Xu +6

We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudi…

cond-mat.mes-hall2003

Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions

C. Ruester, T. Borzenko, C. Gould +7

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side…