GaMnAs-based hybrid multiferroic memory device

Abstract

A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite efficient magnetization detection, magnetization manipulation is primarily performed by current-generated local magnetic fields and is very inefficient. Here we report a novel non-volatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field.

4 pages, 5 figures

References in corpus (3)

• Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator
• Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation
• Lithographic engineering of anisotropies in (Ga,Mn)As

Cited by in corpus (6)

• Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature
• Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
• Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
• Low voltage control of ferromagnetism in a semiconductor p-n junction
• Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures
• Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer