435 citations · 3.8k across the 60 of their papers we have counts for
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Annealing shallow Si/SiO interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
Jin-Sung Kim, Alexei M. Tyryshkin, Stephen A. Lyon
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO interface. Here we show that a fo…
Electron Spin Resonance at the Level of 10000 Spins Using Low Impedance Superconducting Resonators
C. Eichler, A. J. Sigillito, S. A. Lyon +1
We report on electron spin resonance (ESR) measurements of phosphorus donors localized in a 200 square micron area below the inductive wire of a lumped element superconducting reso…
Large Stark tuning of donor electron spin quantum bits in germanium
A. J. Sigillito, A. M. Tyryshkin, J. W. Beeman +3
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many ad…
Spin Coherence and N ESEEM Effects of Nitrogen-Vacancy Centers in Diamond with X-band Pulsed ESR
B. C. Rose, C. D. Weis, A. M. Tyryshkin +2
Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2…