76 citations · 134 across the 5 of their papers we have counts for
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cond-mat.mes-hall2005★ 12 cited
Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
K. Lai, P. D. Ye, W. Pan +4
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) AlO as the gate dielectric are fabricated on the Si/SiGe hetero…
cond-mat.mes-hall2005★ 43 cited
Anomalous Spin Polarization of GaAs Two-Dimensional Hole Systems
R. Winkler, E. Tutuc, S. J. Papadakis +4
We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal…