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Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
M. Usman, B. Voisin, J. Salfi +2
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical metho…
Valley filtering and spatial maps of coupling between silicon donors and quantum dots
J. Salfi, B. Voisin, A. Tankasala +6
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the…
Two-electron states of a group V donor in silicon from atomistic full configuration interaction
Archana Tankasala, Joseph Salfi, Juanita Bocquel +7
Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight…
Spin-orbit dynamics of single acceptor atoms in silicon
J. van der Heijden, T. Kobayashi, M. G. House +5
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of…
Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
Giuseppe Carlo Tettamanzi, Samuel James Hile, Matthew Gregory House +3
The ability to apply GHz frequencies to control the quantum state of a single atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based…