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New tools for the direct characterisation of FinFETs
G. C. Tettamanzi, A. Paul, S. Lee +2
This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechan…
Dopant metrology in advanced FinFETs
G. P. Lansbergen, R. Rahman, G. C. Tettamanzi +4
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of e…
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R. Rahman, G. P. Lansbergen, J. Verduijn +7
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experim…
Engineered valley-orbit splittings in quantum confined nanostructures in silicon
R. Rahman, J. Verduijn, N. Kharche +4
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum con…
Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Abhijeet Paul, Giuseppe C. Tettamanzi, Sunhee Lee +5
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretica…