614 citations · 8.8k across the 156 of their papers we have counts for
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Effect of chemical substitution on the skyrmion phase in CuOSeO
Paul M. Neves, Dustin A. Gilbert, Sheng Ran +7
Magnetic skyrmions have been the focus of intense research due to their unique qualities which result from their topological protections. Previous work on CuOSeO, the only…
Precipitating Ordered Skyrmion Lattices from Helical Spaghetti
Dustin A. Gilbert, Alexander J. Grutter, Paul M. Neves +8
Magnetic skyrmions have been the focus of intense research due to their potential applications in ultra-high density data and logic technologies, as well as for the unique physics…
Ambipolar Surface State Thermoelectric Power of Topological Insulator Bi2Se3
Dohun Kim, Paul Syers, Nicholas P. Butch +2
We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the…
Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice
Valla Fatemi, Benjamin Hunt, Hadar Steinberg +8
We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower…
Coherent Topological Transport on the Surface of Bi2Se3
Dohun Kim, Paul Syers, Nicholas P. Butch +2
The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc en…
Magnetothermoelectric properties of Bi2Se3
B. Fauqué, N. P. Butch, P. Syers +6
We present a study of entropy transport in Bi2Se3 at low temperatures and high magnetic fields. In the zero-temperature limit, the magnitude of the Seebeck coefficient quantitative…
Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3
C. Ojeda-Aristizabal, M. S. Fuhrer, N. P Butch +2
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first…
Topological insulator quantum dot with tunable barriers
Sungjae Cho, Dohun Kim, Paul Syers +3
Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers…
Insulating behavior in ultra-thin bismuth selenide field effect transistors
Sungjae Cho, Nicholas P. Butch, Johnpierre Paglione +1
Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and…
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Dohun Kim, Sungjae Cho, Nicholas P. Butch +5
The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spect…
Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3
Nardeep Kumar, Brian A. Ruzicka, N. P. Butch +4
Carrier and phonon dynamics in Bi2Se3 crystals are studied by a spatially resolved ultrafast pump-probe technique. Pronounced oscillations in differential reflection are observed w…
Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
Nicholas P. Butch, Kevin Kirshenbaum, Paul Syers +4
While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures…
The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
V. M. Pudalov, M. E. Gershenson, H. Kojima +5
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities cm, which includes…