80 citations · 241 across the 9 of their papers we have counts for
Showing 2019Show all
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cond-mat.mes-hall2019★ 4 cited
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion +20
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…
cond-mat.mes-hall2019★ 80 cited
Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
S. Schaal, I. Ahmed, J. A. Haigh +12
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelit…
physics.app-ph2019★ 39 cited
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…