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Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
E. E. Vdovin, A. Mishchenko, M. T. Greenaway +12
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages be…
Lifting of the Landau level degeneracy in graphene devices in a tilted magnetic field
F. Chiappini, S. Wiedmann, K. S. Novoselov +4
We report on transport and capacitance measurements of graphene devices in magnetic fields up to 30 T. In both techniques, we observe the full splitting of Landau levels and we emp…
Resonant tunnelling between the chiral Landau states of twisted graphene lattices
M. T. Greenaway, E. E. Vdovin, A. Mishchenko +12
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structur…
Control of excitons in multi-layer van der Waals heterostructures
E. V. Calman, C. J. Dorow, M. M. Fogler +4
We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emi…
Nonlocal Response and Anamorphosis: the Case of Few-Layer Black Phosphorus
Artem Mishchenko, Yang Cao, Geliang Yu +5
Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting prop…
Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
J. Gaskell, L. Eaves, K. S. Novoselov +4
We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic sim…