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20102022
most citedElectrons and holes in phosphorene

187 citations · 800 across the 20 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2022★ 13 cited

Intervalley electron-hole exchange interaction and impurity-assisted recombination of indirect excitons in WS and WSe monolayers

Pengke Li, Cedric Robert, Dinh Van Tuan +3

The variety of excitonic states in tungsten-based dichalcogenide monolayers stems from unique interplay between the spin and valley degrees of freedom. One of the exciton species i…

cond-mat.mes-hall2020★ 10 cited

Mid-infrared photoconductivity spectra of single tellurium nanowires]{Mid-infrared photoconductivity spectra of single tellurium nanowires

Pengke Li

Due to its low bandgap and high optical efficiency, tellurium is considered an important material candidate for mid-infrared applications. Taking advantage of its structural anisot…

cond-mat.mes-hall2018★ 13 cited

Excitons without effective mass: biased bilayer graphene

Pengke Li, Ian Appelbaum

Understanding the dynamics of excitons in two dimensional semiconductors requires a theory that incorporates the essential physics distinct from their three-dimensional counterpart…

cond-mat.mes-hall2017★ 9 cited

Robust zero-energy bound states in a helical lattice

Pengke Li, Jay D. Sau, Ian Appelbaum

Atomic-scale helices exist as motifs for several material lattices. We examine a tight-binding model for a single one-dimensional monatomic chain with a p-orbital basis coiled into…

cond-mat.mes-hall2017★ 11 cited

Intrinsic two-dimensional state on the pristine surface of tellurium

Pengke Li, Ian Appelbaum

Using a tight-binding description, we show how the zero-dimensional state bound to the edge of a single one-dimensional helical chain of tellurium atoms evolves into two-dimensiona…

cond-mat.mes-hall2016★ 10 cited

Spin polarization control in a 2-dimensional semiconductor

Ian Appelbaum, Pengke Li

Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or…

cond-mat.mes-hall2014★ 12 cited

Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

Ian Appelbaum, Holly N. Tinkey, Pengke Li

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-depende…