57 citations · 335 across the 14 of their papers we have counts for
15 papers · 1 filter
Megapixels @ Megahertz -- The AGIPD High-Speed Cameras for the European XFEL
Ulrich Trunk, Aschkan Allahgholi, Julian Becker +23
The European XFEL is an extremely brilliant Free Electron Laser Source with a very demanding pulse structure: trains of 2700 X-Ray pulses are repeated at 10 Hz. The pulses inside t…
The Adaptive Gain Integrating Pixel Detector at the European XFEL
Aschkan Allahgholi, Julian Becker, Annette Delfs +29
The Adaptive Gain Integrating Pixel Detector (AGIPD) is an x-ray imager, custom designed for the European x-ray Free-Electron Laser (XFEL). It is a fast, low noise integrating dete…
Characterization of Chromium Compensated GaAs as an x-ray Sensor Material for Charge-Integrating Pixel Array Detectors
Julian Becker, Mark W. Tate, Katherine S. Shanks +5
We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The mater…
Sub-Microsecond X-Ray Imaging Using Hole-Collecting Schottky type CdTe with Charge-Integrating Pixel Array Detectors
Julian Becker, Mark W. Tate, Katherine S. Shanks +5
CdTe is increasingly being used as the x-ray sensing material in imaging pixel array detectors for x-rays, generally above 20 keV, where silicon sensors become unacceptably transpa…
High Dynamic Range X-ray Detector Pixel Architectures Utilizing Charge Removal
Joel T. Weiss, Katherine S. Shanks, Hugh T. Philipp +5
Several charge integrating CMOS pixel front-ends utilizing charge removal techniques have been fabricated to extend dynamic range for x-ray diffraction applications at synchrotron…
Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science
Julian Becker, Mark W. Tate, Katherine S. Shanks +6
Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electro…
Challenges for the Adaptive Gain Integrating Pixel Detector (AGIPD) design due to the high intensity photon radiation environment at the European XFEL
J. Becker, L. Bianco, P. Göttlicher +17
The European X-ray Free Electron Laser (XFEL) is a new research facility currently under construction in Hamburg, Germany. With a pulse length of less than 100 fs and an extremely…
Performance tests of an AGIPD 0.4 assembly at the beamline P10 of PETRA III
J. Becker, A. Marras, A. Klyuev +3
The Adaptive Gain Integrating Pixel Detector (AGIPD) is a novel detector system, currently under development by a collaboration of DESY, the Paul Scherrer Institute in Switzerland,…
Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Julian Becker, Eckhart Fretwurst +3
Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-Si…
Challenges for Silicon Pixel Sensors at the European XFEL
Robert Klanner, Julian Becker, Eckhart Fretwurst +4
A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition…
The single photon sensitivity of the Adaptive Gain Integrating Pixel Detector
Julian Becker, Dominic Greiffenberg, Ulrich Trunk +6
Single photon sensitivity is an important property of certain detection systems. This work investigated the single photon sensitivity of the Adaptive Gain Integrating Pixel Detecto…
Simulation study of the impact of AGIPD design choices on X-ray Photon Correlation Spectroscopy utilizing the intensity autocorrelation technique
Julian Becker, Christian Gutt, Heinz Graafsma
The European XFEL, currently under construction, will produce a coherent X-ray pulse every 222 ns in pulse trains of up to 2700 pulses. In conjunction with the fast 2D area detecto…
Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes
Jörn Lange, Julian Becker, Eckhart Fretwurst +2
Charge multiplication (CM) in pn epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent flue…
Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors
Julian Becker, Klaus Gärtner, Robert Klanner +1
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in…
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields
Julian Becker, Eckhart Fretwurst, Robert Klanner
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility…