Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors
arXiv:1007.4433 · doi:10.1016/j.nima.2010.10.010
Abstract
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper presents a detailed comparison of numerical simulations with time resolved current measurements on planar silicon sensors using 660~nm laser light to create different densities of electron hole pairs.
Revised Version after peer-review
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