Determination of the electronics transfer function for current transient measurements
arXiv:1407.2761 · doi:10.1016/j.nima.2014.12.016
Abstract
We describe a straight-forward method for determining the transfer function of the readout of a sensor for the situation in which the current transient of the sensor can be precisely simulated. The method relies on the convolution theorem of Fourier transforms. The specific example is a planar silicon pad diode connected with a 50 cable to an amplifier followed by a 5 GS/s sampling oscilloscope. The charge carriers in the sensor were produced by picosecond lasers with light of wavelengths of 675 and 1060 nm. The transfer function is determined from the 1060 nm data with the pad diode biased at 1000 V. It is shown that the simulated sensor response convoluted with this transfer function provides an excellent description of the measured transients for the laser light of both wavelengths, at voltages 50 V above the depletion voltage of about 90 V up to the maximum applied voltage of 1000 V. The method has been developed for the precise measurement of the dependence of the drift velocity of electrons and holes in high-ohmic silicon on crystal orientation, electric field and temperature. It can also be applied for the analysis of transient-current measurements of radiation-damaged solid state sensors, as long as sensors properties, like high-frequency capacitance, are not too different.
Technical Note
References in corpus (2)
Cited by in corpus (5)
- Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon
- Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
- Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements
- Precision measurement of the carrier drift velocities in <100> silicon
- Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements