Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements

Abstract

This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements performed at $\pi -$M1 beam at PSI laboratory. The simulation is based on the combined use of several software tools (TCAD, GEANT4, TCoDe and TFBoost) which allow to fully design and simulate the device physics response in very short computational time, O(1-100 s) per simulated signal, by exploiting parallel computation using single or multi-thread processors. This allowed to produce large samples of simulated signals, perform detailed studies of the sensor characteristics and make precise comparisons with experimental results.

arXiv comment23 pages, 18 figures

References in corpus (5)

• Allpix${}^2$: A Modular Simulation Framework for Silicon Detectors
• Intrinsic time resolution of 3D-trench silicon pixels for charged particle detection
• Radiation hardness of small-pitch 3D pixel sensors up to a fluence of $3\times 10^{16}$ n${}_{\mathrm{eq}}$/cm${}^2$
• High-resolution timing electronics for fast pixel sensors
• Determination of the electronics transfer function for current transient measurements