14 citations · 30 across the 5 of their papers we have counts for
5 papers
Influence of radiation damage on the absorption of near-infrared light in silicon
C. Scharf, F. Feindt, R. Klanner
The absorption length, , of light with wavelengths between 0.95 and 1.30m in silicon irradiated with 24GeV/c protons to 1MeV neutron equivalent fluences between…
A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation
Joern Schwandt, Eckhart Fretwurst, Erika Garutti +3
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated…
Precision measurement of the carrier drift velocities in <100> silicon
C. Scharf, R. Klanner
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are p…
Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon
Christian Scharf, Robert Klanner
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> orientation are presented…
Determination of the electronics transfer function for current transient measurements
Christian Scharf, Robert Klanner
We describe a straight-forward method for determining the transfer function of the readout of a sensor for the situation in which the current transient of the sensor can be precise…