14 citations · 30 across the 5 of their papers we have counts for
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physics.ins-det2015★ 2 cited
Precision measurement of the carrier drift velocities in <100> silicon
C. Scharf, R. Klanner
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are p…
physics.ins-det2015★ 14 cited
Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon
Christian Scharf, Robert Klanner
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> orientation are presented…